A 5.8 GHz 1.7 dB NF fully integrated differential low noise amplifier in CMOS

This work presents a fully integrated differential 5.8 GHz low-noise amplifier (LNA). The LNA is fabricated in a 90 nm RF-CMOS process and has a power gain of 12.5 dB, an IIP3 of 4dBm, and a noise figure of 1.7 dB consuming 14 mA from a 1.2 V supply. Compared to previously reported differential CMOS...

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Bibliographic Details
Main Authors: Aspemyr, L., Sjoland, H., Jacobsson, H., Mingquan Bao, Carchon, G.
Format: Conference Proceeding
Language:English
Subjects:
cascode
CMOS
CMOS technology
differential
Differential amplifiers
Frequency
Impedance matching
Linearity
LNA
Low noise amplifier
Low-noise amplifiers
Noise figure
Noise measurement
Thin film inductors
Topology
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Description
Summary:This work presents a fully integrated differential 5.8 GHz low-noise amplifier (LNA). The LNA is fabricated in a 90 nm RF-CMOS process and has a power gain of 12.5 dB, an IIP3 of 4dBm, and a noise figure of 1.7 dB consuming 14 mA from a 1.2 V supply. Compared to previously reported differential CMOS designs this LNA show lower noise figure and better linearity.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2006.4429428