Numerical Modelling Study of the Sensitivity of SOS MOSFET Characteristics to Silicon film Thickness and Back Surface Trapped Charge Variation

In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the d...

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Bibliographic Details
Main Authors: Bertling, K., Rakic, A.D., Yew-Tong Yeow
Format: Conference Proceeding
Language:English
Subjects:
Australia
Electron traps
Information technology
interface charge
Leakage current
MOSFET circuits
MOSFETs
Numerical models
Semiconductor films
Semiconductor thin films
Silicon on insulator technology
SOS
Threshold voltage
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Description
Summary:In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the device and in particular the reduction of the threshold voltage.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2006.4429937