Heteroepitaxy and Selective Epitaxy for Discrete and Integrated Devices

We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) netwo...

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Main Authors: Lourdudoss, S., Olsson, F., Barrios, C.A., Hakkarainen, T., Berrier, A., Anand, S., Aubert, A., Berggren, J., Broeke, R.G., Cao, J., Chubun, N., Seo, S.-W., Baek, J.-H., Aihara, K., Anh-Vu Pham, Yoo, S.J.B., Avella, M., Jimenez, J.
Format: Conference Proceeding
Language:English
Subjects:
Arrayed waveguide gratings
Epitaxial growth
Heteroepitaxy
Hydride vapour phase epitaxy
Indium phosphide
nanopillars
OCDAM devices
OCDMA devices
Optical arrays
Optical devices
Optical surface waves
Optical waveguides
Phased arrays
selective epitaxy
Silicon on insulator technology
Substrates
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Summary:We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) networking applications.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2006.4429944