Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

By removing the SiN gate spacers in n-channel FinFETs with Silicon-Carbon (SiC) Source and Drain (S/D) stressors, the mechanical stress equilibrium is perturbed. Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer remov...

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Bibliographic Details
Main Authors: Tsung-Yang Liow, Kian-Ming Tan, Lee, R.T.P., Ming Zhu, Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Epitaxial growth
Fabrication
FinFETs
Implants
Microelectronics
Silicon carbide
Silicon compounds
Tensile stress
Wet etching
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Summary:By removing the SiN gate spacers in n-channel FinFETs with Silicon-Carbon (SiC) Source and Drain (S/D) stressors, the mechanical stress equilibrium is perturbed. Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer removal. This stress increase results in up to ~15 % further I Dsat enhancement over strained SiC S/D FinFETs with spacers intact. Peak G m is enhanced by ~33 %.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2007.4430901