A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs

This paper presents a new concept for the MOSFET saturation voltages at the drain and source sides referenced to bulk, and applies them to the popularly used smoothing functions for the effective drain-source voltage ( V ds,eff ). The proposed model not only builds in physically all the terminal-bia...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-02, Vol.55 (2), p.624-631
Main Authors: Guan Huei See, Xing Zhou, Chandrasekaran, K., Siau Ben Chiah, Zhaomin Zhu, Chengqing Wei, Shihuan Lin, Guojun Zhu, Guan Hui Lim
Format: Article
Language:English
Subjects:
Applied sciences
Approximation methods
Asymmetric source/drain
Asymmetry
compact model
Derivatives
Drains
effective drain-source voltage
Electric potential
Electronics
Exact sciences and technology
Gummel symmetry test (GST)
higher order derivative
Integrated circuit modeling
Layout
Mathematical model
Mathematical models
MOSFET
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Smoothing
Smoothing methods
Studies
Symmetry
Transistors
Voltage
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Summary:This paper presents a new concept for the MOSFET saturation voltages at the drain and source sides referenced to bulk, and applies them to the popularly used smoothing functions for the effective drain-source voltage ( V ds,eff ). The proposed model not only builds in physically all the terminal-bias variations, but is also extended to include source/drain asymmetry in real devices in a single-core compact model. The new model resolves a key bottleneck in existing models for passing the Gummel symmetry test (GST) in higher order derivatives, which has to be traded off for the geometry-dependent V ds,eff smoothing parameter. The complete drain-current model, including the effects of velocity saturation and overshoot as well as source/drain series resistance, has also been reformulated with the same ldquobulk-referencingrdquo concept. It is shown that the proposed model passes the GST in all higher order derivatives without any constraint on the value of the smoothing parameter. It also demonstrates potential extension to modeling asymmetric MOSFETs, which is becoming an important model capability.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.912951