High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P...

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Bibliographic Details
Main Authors: Sorge, R., Fischer, A., Ehwald, K.-E., Barth, R., Ostrovsky, P., Pliquett, R., Schulz, K., Bolze, D., Schley, P., Schmidt, D., Wulf, H.-E., Grutzediek, H., Scheerer, J., Hartmetz, P.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
CMOS technology
Costs
Energy management
High power amplifiers
Isolation technology
Low voltage
Radio frequency
Radiofrequency amplifiers
Switching frequency
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Summary:We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.
DOI:10.1109/SMIC.2008.21