Advanced monitoring method for copper interconnect process

Stabilizing copper interconnect process is the key for yield and reliability improvement. Forming adequate grains in a copper film is so important to have the stable process, but there is no proper method of monitoring grains in a copper film. We introduce an advanced method of monitoring grain size...

Full description

Saved in:
Bibliographic Details
Main Authors: Ishikawa, K., Ando, T., Ikota, M., Funakoshi, T., Imai, Y., Watanabe, K., Miura, A., Ohta, H., Nemoto, K., Onozuka, T.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Copper
Grain size
Light scattering
Manufacturing
Monitoring
Rough surfaces
Surface roughness
Throughput
Transmission electron microscopy
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Ishikawa, K.
Ando, T.
Ikota, M.
Funakoshi, T.
Imai, Y.
Watanabe, K.
Miura, A.
Ohta, H.
Nemoto, K.
Onozuka, T.
description Stabilizing copper interconnect process is the key for yield and reliability improvement. Forming adequate grains in a copper film is so important to have the stable process, but there is no proper method of monitoring grains in a copper film. We introduce an advanced method of monitoring grain size using scattering light that we call the micro-haze method. We verified the effectiveness of the method by the experimental design and concluded that the method makes it possible to monitor grains in a copper film.
doi_str_mv 10.1109/ISSM.2007.4446837
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4446837</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4446837</ieee_id><sourcerecordid>4446837</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-6a364015ad15275ba5717562bb8cc03615c6698ea6494b00e538ee1d2428d1703</originalsourceid><addsrcrecordid>eNo1j81OwzAQhI0AiVLyAIiLXyBlN_5LuFUVhUpFHNoDt8qxt2BE7MiJkHh7IlEuM5rLNzOM3SIsEKG53-x2L4sKwCyklLoW5owVjalRVlLipM05u_4PqC_YDFUlSqXE2xUrhuETANBoCUrP2MPSf9voyPMuxTCmHOI772j8SJ4fU-Yu9T1lHuJI2aUYyY28z8nRMNywy6P9Gqg4-Zzt14_71XO5fX3arJbbMjQwltqKqQqV9dMKo1qrDBqlq7atnQOhUTmtm5qslo1sAUiJmgh9JavaowExZ3d_2EBEhz6Hzuafw-m5-AW1Iklg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Advanced monitoring method for copper interconnect process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ishikawa, K. ; Ando, T. ; Ikota, M. ; Funakoshi, T. ; Imai, Y. ; Watanabe, K. ; Miura, A. ; Ohta, H. ; Nemoto, K. ; Onozuka, T.</creator><creatorcontrib>Ishikawa, K. ; Ando, T. ; Ikota, M. ; Funakoshi, T. ; Imai, Y. ; Watanabe, K. ; Miura, A. ; Ohta, H. ; Nemoto, K. ; Onozuka, T.</creatorcontrib><description>Stabilizing copper interconnect process is the key for yield and reliability improvement. Forming adequate grains in a copper film is so important to have the stable process, but there is no proper method of monitoring grains in a copper film. We introduce an advanced method of monitoring grain size using scattering light that we call the micro-haze method. We verified the effectiveness of the method by the experimental design and concluded that the method makes it possible to monitor grains in a copper film.</description><identifier>ISSN: 1523-553X</identifier><identifier>ISBN: 1424411416</identifier><identifier>ISBN: 9781424411412</identifier><identifier>EISBN: 9781424411429</identifier><identifier>EISBN: 1424411424</identifier><identifier>DOI: 10.1109/ISSM.2007.4446837</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atomic force microscopy ; Copper ; Grain size ; Light scattering ; Manufacturing ; Monitoring ; Rough surfaces ; Surface roughness ; Throughput ; Transmission electron microscopy</subject><ispartof>2007 International Symposium on Semiconductor Manufacturing, 2007, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4446837$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54534,54899,54911</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4446837$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ishikawa, K.</creatorcontrib><creatorcontrib>Ando, T.</creatorcontrib><creatorcontrib>Ikota, M.</creatorcontrib><creatorcontrib>Funakoshi, T.</creatorcontrib><creatorcontrib>Imai, Y.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Miura, A.</creatorcontrib><creatorcontrib>Ohta, H.</creatorcontrib><creatorcontrib>Nemoto, K.</creatorcontrib><creatorcontrib>Onozuka, T.</creatorcontrib><title>Advanced monitoring method for copper interconnect process</title><title>2007 International Symposium on Semiconductor Manufacturing</title><addtitle>ISSM</addtitle><description>Stabilizing copper interconnect process is the key for yield and reliability improvement. Forming adequate grains in a copper film is so important to have the stable process, but there is no proper method of monitoring grains in a copper film. We introduce an advanced method of monitoring grain size using scattering light that we call the micro-haze method. We verified the effectiveness of the method by the experimental design and concluded that the method makes it possible to monitor grains in a copper film.</description><subject>Atomic force microscopy</subject><subject>Copper</subject><subject>Grain size</subject><subject>Light scattering</subject><subject>Manufacturing</subject><subject>Monitoring</subject><subject>Rough surfaces</subject><subject>Surface roughness</subject><subject>Throughput</subject><subject>Transmission electron microscopy</subject><issn>1523-553X</issn><isbn>1424411416</isbn><isbn>9781424411412</isbn><isbn>9781424411429</isbn><isbn>1424411424</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1j81OwzAQhI0AiVLyAIiLXyBlN_5LuFUVhUpFHNoDt8qxt2BE7MiJkHh7IlEuM5rLNzOM3SIsEKG53-x2L4sKwCyklLoW5owVjalRVlLipM05u_4PqC_YDFUlSqXE2xUrhuETANBoCUrP2MPSf9voyPMuxTCmHOI772j8SJ4fU-Yu9T1lHuJI2aUYyY28z8nRMNywy6P9Gqg4-Zzt14_71XO5fX3arJbbMjQwltqKqQqV9dMKo1qrDBqlq7atnQOhUTmtm5qslo1sAUiJmgh9JavaowExZ3d_2EBEhz6Hzuafw-m5-AW1Iklg</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Ishikawa, K.</creator><creator>Ando, T.</creator><creator>Ikota, M.</creator><creator>Funakoshi, T.</creator><creator>Imai, Y.</creator><creator>Watanabe, K.</creator><creator>Miura, A.</creator><creator>Ohta, H.</creator><creator>Nemoto, K.</creator><creator>Onozuka, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200710</creationdate><title>Advanced monitoring method for copper interconnect process</title><author>Ishikawa, K. ; Ando, T. ; Ikota, M. ; Funakoshi, T. ; Imai, Y. ; Watanabe, K. ; Miura, A. ; Ohta, H. ; Nemoto, K. ; Onozuka, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6a364015ad15275ba5717562bb8cc03615c6698ea6494b00e538ee1d2428d1703</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Atomic force microscopy</topic><topic>Copper</topic><topic>Grain size</topic><topic>Light scattering</topic><topic>Manufacturing</topic><topic>Monitoring</topic><topic>Rough surfaces</topic><topic>Surface roughness</topic><topic>Throughput</topic><topic>Transmission electron microscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Ishikawa, K.</creatorcontrib><creatorcontrib>Ando, T.</creatorcontrib><creatorcontrib>Ikota, M.</creatorcontrib><creatorcontrib>Funakoshi, T.</creatorcontrib><creatorcontrib>Imai, Y.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Miura, A.</creatorcontrib><creatorcontrib>Ohta, H.</creatorcontrib><creatorcontrib>Nemoto, K.</creatorcontrib><creatorcontrib>Onozuka, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ishikawa, K.</au><au>Ando, T.</au><au>Ikota, M.</au><au>Funakoshi, T.</au><au>Imai, Y.</au><au>Watanabe, K.</au><au>Miura, A.</au><au>Ohta, H.</au><au>Nemoto, K.</au><au>Onozuka, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Advanced monitoring method for copper interconnect process</atitle><btitle>2007 International Symposium on Semiconductor Manufacturing</btitle><stitle>ISSM</stitle><date>2007-10</date><risdate>2007</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1523-553X</issn><isbn>1424411416</isbn><isbn>9781424411412</isbn><eisbn>9781424411429</eisbn><eisbn>1424411424</eisbn><abstract>Stabilizing copper interconnect process is the key for yield and reliability improvement. Forming adequate grains in a copper film is so important to have the stable process, but there is no proper method of monitoring grains in a copper film. We introduce an advanced method of monitoring grain size using scattering light that we call the micro-haze method. We verified the effectiveness of the method by the experimental design and concluded that the method makes it possible to monitor grains in a copper film.</abstract><pub>IEEE</pub><doi>10.1109/ISSM.2007.4446837</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1523-553X
ispartof 2007 International Symposium on Semiconductor Manufacturing, 2007, p.1-4
issn 1523-553X
language eng
recordid cdi_ieee_primary_4446837
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Atomic force microscopy
Copper
Grain size
Light scattering
Manufacturing
Monitoring
Rough surfaces
Surface roughness
Throughput
Transmission electron microscopy
title Advanced monitoring method for copper interconnect process
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T15%3A00%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Advanced%20monitoring%20method%20for%20copper%20interconnect%20process&rft.btitle=2007%20International%20Symposium%20on%20Semiconductor%20Manufacturing&rft.au=Ishikawa,%20K.&rft.date=2007-10&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1523-553X&rft.isbn=1424411416&rft.isbn_list=9781424411412&rft_id=info:doi/10.1109/ISSM.2007.4446837&rft.eisbn=9781424411429&rft.eisbn_list=1424411424&rft_dat=%3Cieee_6IE%3E4446837%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-6a364015ad15275ba5717562bb8cc03615c6698ea6494b00e538ee1d2428d1703%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4446837&rfr_iscdi=true