Spacer etch optimization on high density memory products to eliminate core leakage failures

Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.

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Bibliographic Details
Main Authors: Dharmarajan, E., Shengnian Song, Mclaughlin, L., Guan, J., Gazda, J., Lin, E., Wen-Jie Qi, Shiraiwa, H., Hussey, J., Lansford, J., Banerjee, B.
Format: Conference Proceeding
Language:English
Subjects:
Cobalt
Current measurement
Density measurement
Etching
Failure analysis
Flash memory
Manufacturing industries
Silicides
Testing
Voltage
Online Access:Request full text
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Description
Summary:Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.
ISSN:1523-553X
DOI:10.1109/ISSM.2007.4446867