Anything more than size in nanoelectronics

In this talk, the author give a survey of this important technical field, and also efforts at National Nano Device Laboratories (NDL) for Si-based devices and architectures that maybe implemented along the roads toward 22 nm-node CMOS and beyond for more and more than Moore. In particular, the autho...

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Bibliographic Details
Main Authors: Wei-Xin Ni, Jia-Min Shieh, Horng-Chih Lin
Format: Conference Proceeding
Language:English
Subjects:
Consumer electronics
Electronics industry
Fabrication
III-V semiconductor materials
Industrial electronics
Laboratories
Materials science and technology
Nanoelectronics
Physics
Textile industry
Online Access:Request full text
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Summary:In this talk, the author give a survey of this important technical field, and also efforts at National Nano Device Laboratories (NDL) for Si-based devices and architectures that maybe implemented along the roads toward 22 nm-node CMOS and beyond for more and more than Moore. In particular, the author deal with some device solutions using Ge or III-V semiconductors for enhancing performance and functionalities, as well as issues relating to so-called heterogeneous integration of these devices with existing Si chip systems. It is noted that for nano-sized p-MOS, Ge channel might be a good solution, but for n-MOS there are server limits even considering the implementation of some III-V semiconductors as the channel materials. Furthermore, some routes to integrate functional devices for electronic-photonic convergence and bio-electronic applications was also discussed.
DOI:10.1109/EDSSC.2007.4450051