A Novel Structure of a-Si:H Based Photoconductor Stacked on APS Technology

In this paper, we present the characterization of a-Si:H based Photoconductor stacked on Active Pixel with Shield Gate (SG) technology to avoid electrical cross-talk current across pixels. The pixel area consists of a p-i-n layer as photo detector, and a newly proposed SG electrode thereby providing...

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Bibliographic Details
Main Authors: Hsin-Heng Wang, Miida, T., Chia-Chiang Wang, Kawajiri, K., Chiu-Tsung Huang, Shin-Siang Lin
Format: Conference Proceeding
Language:English
Subjects:
a-Si:H
APS
CMOS image sensor
CMOS image sensors
Computational Intelligence Society
cross-talk
Electrostatic analysis
Energy consumption
Image sensors
Performance analysis
Photoconductivity
Sensor phenomena and characterization
Signal to noise ratio
simulation
Thermal sensors
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Summary:In this paper, we present the characterization of a-Si:H based Photoconductor stacked on Active Pixel with Shield Gate (SG) technology to avoid electrical cross-talk current across pixels. The pixel area consists of a p-i-n layer as photo detector, and a newly proposed SG electrode thereby providing a high potential barrier between two pixels. The simulation and measurement results demonstrate that cross-talk can be suppressed by the barrier for electrons for this proposed pixel. Moreover, in order to realize the influence of pixel's geography, different i-layer thickness was studied in this work. By simulation result, thicker i-layer would be larger absorption that will bring the high sensitivity of pixel, though it is trading off with cross-talk.
DOI:10.1109/EDSSC.2007.4450097