Misalignment of the Block Oxide Height in Self-aligned Source/Drain-tied bFDSOI-FET

This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the...

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Bibliographic Details
Main Authors: Jyi-Tsong Lin, Yi-Chuen Eng, Kung-Kai Kao, Hau-Yuan Huang, Jeng-Da Lin, Shiang-Shi Kang, Po-Hsieh Lin
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Dry etching
Electric variables
Fluctuations
MOSFET circuits
Pattern recognition
Planarization
Semiconductor films
Silicon on insulator technology
Thermal factors
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Summary:This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating effects (SHEs) can be well controlled chiefly due to the presence of the S/D-tied scheme.
DOI:10.1109/EDSSC.2007.4450191