Analytical Study of DC Characteristics of p-Si/ß-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode

The analytical method is developed to calculate the equilibrium and forward-bias conditions of p-Si/beta-FeSi2/n-Si DH LED. The Poisson's equation is solved to investigate the equilibrium electric field and free carriers distributions. Diffusion and thermionic emission mechanisms are used to ca...

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Bibliographic Details
Main Authors: Huang, J.S., Lee, K.W., Wang, C.B., Huang, Y.S., Shiu, S.F., Liu, Y.J.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Current density
DH-HEMTs
Light emitting diodes
Neodymium
Poisson equations
Semiconductivity
Semiconductor impurities
Space charge
Thermionic emission
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Summary:The analytical method is developed to calculate the equilibrium and forward-bias conditions of p-Si/beta-FeSi2/n-Si DH LED. The Poisson's equation is solved to investigate the equilibrium electric field and free carriers distributions. Diffusion and thermionic emission mechanisms are used to calculate I-V characteristics and ideal internal quantum efficiency.
DOI:10.1109/EDSSC.2007.4450222