Thermal Stability Performance of Metamorphic High Electron Mobility Transistors (MHEMTs)

The thermal stability performance of double δ-doped In 0.42 Al 0.58 As/In 0.46 Ga 0.54 As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics ar...

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Bibliographic Details
Main Authors: Chen, L.Y., Chu, K.Y., Chen, T.P., Hung, C.W., Tsai, T.H., Chen, L.A., Cheng, S.Y., Liu, W.C.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Gallium arsenide
Gold
HEMTs
mHEMTs
MODFETs
Substrates
Temperature distribution
Thermal degradation
Thermal stability
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Summary:The thermal stability performance of double δ-doped In 0.42 Al 0.58 As/In 0.46 Ga 0.54 As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10 -3 μA/mmldrK), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.
DOI:10.1109/EDSSC.2007.4450227