Physics based scalable MOSFET mismatch model for statistical circuit simulation

MOSFET mismatch model based on BSIM3v3 for a CMOS 0.13 μm technology using backward propagation of variance (BPV) methodology coupled with Pelgrom model basis was developed. Test structures were carefully designed for intrinsic MOSFET drain current mismatch characterisation under 4 different gate vo...

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Bibliographic Details
Main Authors: Lim, G.H., Zhou, X., Khu, K., Yoo, Y.K., Poh, F., See, G.H., Zhu, Z.M., Wei, C.Q., Lin, S.H., Zhu, G.J.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Circuit testing
CMOS technology
Coupling circuits
Monte Carlo methods
MOSFET circuits
Physics
Predictive models
Semiconductor device modeling
Voltage
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Summary:MOSFET mismatch model based on BSIM3v3 for a CMOS 0.13 μm technology using backward propagation of variance (BPV) methodology coupled with Pelgrom model basis was developed. Test structures were carefully designed for intrinsic MOSFET drain current mismatch characterisation under 4 different gate voltages that vary from weak to strong inversion for both linear and saturation regions. Monte Carlo MOSFET matched pair simulation using HSPICE was performed for model verification. The model was shown to be scalable for different biases and sizes and physically consistent in predicting the MOSFET mismatch in threshold voltage in linear and saturation regions.
DOI:10.1109/EDSSC.2007.4450311