Testing Flash Memories for Tunnel Oxide Defects

Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can result in various disturb faults. In this paper, we study various defects in the insulating layers of a IT flash cell and a...

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Bibliographic Details
Main Authors: Mohammad, M.G., Saluja, K.K.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Fault detection
Flash memory
Nonvolatile memory
Performance analysis
Reliability engineering
Semiconductor device manufacture
Semiconductor device testing
Semiconductor memory
Very large scale integration
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Summary:Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can result in various disturb faults. In this paper, we study various defects in the insulating layers of a IT flash cell and analyze their impact on cell performance. Further, we present a test methodology and test algorithms that enable the detection of tunnel oxide defects in an efficient manner.
ISSN:1063-9667
2380-6923
DOI:10.1109/VLSI.2008.41