1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays

We report a GaSb/AlGaSb multi-quantum well diode laser emitting at 1550 nm at 77 K. The laser is grown directly on a GaAs substrate using interfacial misfit (IMF) arrays rather than thick metamorphic buffer layers.

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Bibliographic Details
Main Authors: Mehta, M., Balakrishnan, G., Kutty, M.N., Patel, P., Dawson, L.R., Huffaker, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Gallium arsenide
Gas lasers
Optical arrays
Optical buffering
Quantum well devices
Semiconductor laser arrays
Space vector pulse width modulation
Substrates
Vertical cavity surface emitting lasers
Online Access:Request full text
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Description
Summary:We report a GaSb/AlGaSb multi-quantum well diode laser emitting at 1550 nm at 77 K. The laser is grown directly on a GaAs substrate using interfacial misfit (IMF) arrays rather than thick metamorphic buffer layers.
ISSN:2160-9004
DOI:10.1109/CLEO.2007.4452800