Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes

Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.

Saved in:
Bibliographic Details
Main Authors: Orcutt, J.S., Olubuyide, O.O., Hoyt, J.L., Ram, R.J.
Format: Conference Proceeding
Language:English
Subjects:
Diodes
Germanium
High speed optical techniques
Optical devices
Optical films
Optical modulation
Passivation
Performance evaluation
PIN photodiodes
Silicon
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.
ISSN:2160-9004
DOI:10.1109/CLEO.2007.4453116