Design and Properties of Phototransistor Photodetector in Standard 0.35- \mum SiGe BiCMOS Technology

In this paper, without altering any step of the commercial 0.35-mum SiGe BiCMOS process, a novel photodetector named phototransistor photodetector (PTPD) has been realized and demonstrated. The PTPD shows high photoresponsivity and its structure relaxes the tradeoff between sensitivity and speed. Re...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-03, Vol.55 (3), p.774-781
Main Authors: Kuang-Sheng Lai, Ji-Chen Huang, Hsu, K.Y.-J.
Format: Article
Language:English
Subjects:
BiCMOS integrated circuits
Dark current
Junctions
Photodetector
Photodetectors
phototransistor
Phototransistors
responsivity
Sensitivity
SiGe
Silicon
Silicon germanium
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Summary:In this paper, without altering any step of the commercial 0.35-mum SiGe BiCMOS process, a novel photodetector named phototransistor photodetector (PTPD) has been realized and demonstrated. The PTPD shows high photoresponsivity and its structure relaxes the tradeoff between sensitivity and speed. Responsivities of 9.5 A/W for 670 nm light and of 5.2 A/W for 850 nm light were achieved. The operation details of the PTPD are introduced in this paper. The device can be readily integrated with other on-chip circuits to form a high-performance optoelectronic IC. The low cost, the high performance, and the flexibility in optical-electrical design allow the SiGe PTPD to be used in many demanding applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.915385