N-polar GaN Electronics

In this paper, we discuss recent developments in our work on N-polar GaN heterostructure transistors. While most work in GaN devices has been on Ga-polar films, the opposite direction of polarization provides advantages that could be useful for different device applications. We will first discuss im...

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Bibliographic Details
Main Authors: Rajan, S., Hsieh, E., Man Hoi Wong, Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Electron mobility
Gallium nitride
Gate leakage
HEMTs
MODFETs
Molecular beam epitaxial growth
Physics
Polarization
Transistors
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Summary:In this paper, we discuss recent developments in our work on N-polar GaN heterostructure transistors. While most work in GaN devices has been on Ga-polar films, the opposite direction of polarization provides advantages that could be useful for different device applications. We will first discuss implications of the reversed polarization on transistor design.
DOI:10.1109/IWPSD.2007.4472521