An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom cor...

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Bibliographic Details
Main Authors: Jong-Seok Lee, Ho-Hyun Shin, Han-Sin Lee, Ey-Goo Kang, Man Young Sung
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Circuits
Electric field
Electric resistance
Etching
Implants
Insulated gate bipolar transistor
Insulated gate bipolar transistors
Insulation
Inverters
Ion implantation
Low voltage
Shielding layer
Trench gate
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Summary:A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.
DOI:10.1109/IWPSD.2007.4472639