The Optimization of Chamber Cleaning in the Etching Equipment

This study is an investigation of the way to reduce the particle count by using optical emission spectroscopy (O.E.S.). From the results of O.E.S. analysis, it is revealed that the chamber cleaning seriously affects the particle count. The result of our experiment shows that the particle count depen...

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Bibliographic Details
Main Authors: Yajima, T., Watanabe, M., Kawabata, Y., Ohtake, K., Endo, M., Aoyama, M., Imaoka, K.
Format: Conference Proceeding
Language:English
Subjects:
Cleaning
Electrons
Etching
Fluid flow
Plasma applications
Plasma chemistry
Plasma sources
Silicon
Spectroscopy
Stimulated emission
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Summary:This study is an investigation of the way to reduce the particle count by using optical emission spectroscopy (O.E.S.). From the results of O.E.S. analysis, it is revealed that the chamber cleaning seriously affects the particle count. The result of our experiment shows that the particle count depends both on CF4 gas flow rate and bias power. By changing the cleaning conditions to lower bias power and higher CF4 flow rate, the particle count and defect count are decreased.
ISSN:1523-553X
DOI:10.1109/ISSM.2006.4493097