DFM Challenges for 32nm Node with Double Dipole Lithography (DDL) and Double Patterning Technology (DPT)

Water-based 193 nm immersion lithography enables the IC manufacturing to go beyond 45 nm node. Presently, it is not clear if either high index lens or EUV will be in time for 32 nm node. Double exposure and double patterning are both capable of further extending 193 nm. Double exposure, such as doub...

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Bibliographic Details
Main Authors: Chen, J.F., Staud, W., Arnold, B.
Format: Conference Proceeding
Language:English
Subjects:
Apertures
Design for manufacture
Foundries
Lighting
Lithography
Manufacturing processes
Optical imaging
Protection
Resists
Ultraviolet sources
Online Access:Request full text
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Summary:Water-based 193 nm immersion lithography enables the IC manufacturing to go beyond 45 nm node. Presently, it is not clear if either high index lens or EUV will be in time for 32 nm node. Double exposure and double patterning are both capable of further extending 193 nm. Double exposure, such as double dipole lithography (DDL), forms the intended mask patterns on wafer in two consecutive mask exposures while the wafer stays on the chuck. For double patterning technology (DPT), after the first mask exposure, the wafer is sent to the develop and etch processes. Then it is to come back for a second mask exposure. The intended mask pattern is formed by two independent patterning steps. Successful mask decomposition is essential to enable DDL and DPT for 32 nm node manufacturing. Due to the unique nature of patterning formation for each, we look into their respective DFM challenges.
ISSN:1523-553X
DOI:10.1109/ISSM.2006.4493141