Behavioural and Electrothermal Modelling of the IGBT for Circuits Simulation

The semiconductor devices modelling became today an indispensable tool in the electronic and power electronic fields. Recently several devices models are presented, resulting from semiconductors physics and which are intended only for the design and to the improvement of device performances themselv...

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Bibliographic Details
Main Authors: Elwarraki, E., Sabir, A.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Circuit synthesis
Conductivity
Electrothermal effects
Insulated gate bipolar transistors
Irrigation
Laboratories
MOSFET circuits
Substrates
Thyristors
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Summary:The semiconductor devices modelling became today an indispensable tool in the electronic and power electronic fields. Recently several devices models are presented, resulting from semiconductors physics and which are intended only for the design and to the improvement of device performances themselves. On the other hand, as users one, we are interested in their electrical and thermal behaviour. Indeed, the insertion of these devices in a circuit environment necessitates enough often to find models from passive elements and that reproduce the same behaviour. It appears therefore necessary to adapt the existing models or to develop new behavioural devices models to solve evoked problems in the circuits design. In this way, our paper is interested in the modelling of the IGBT device.
DOI:10.1109/ICECS.2007.4510938