Intraband emission and absorption of terahertz radiation in GaAs/AlGaAs quantum wells

Spontaneous emission of terahertz radiation, equilibrium intraband terahertz light absorption and its temperature dependence are studied in GaAs/AlGaAs quantum well (QW) structures subjected to a lateral electric field. The emission spectrum consists of several lines we attribute to electron transit...

Full description

Saved in:
Bibliographic Details
Main Authors: Ganichev, S.D., Danilov, S.N., Gerl, C., Firsov, D.A., Vorobjev, L.E., Shalygin, V.A., Panevin, V.Yu, Sofronov, A.N., Andrianov, A.A., Zakhar'in, A.O., Zhukov, A.E., Mikhrin, V.S., Vasil'ev, A.P.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Electric variables measurement
Gallium arsenide
Intraband light absorption
lateral electric field
Performance evaluation
Physics
Quantum cascade lasers
quantum wells
Resonance
resonant impurity states
Semiconductor impurities
spontaneous emission
Submillimeter wave measurements
Wavelength measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Spontaneous emission of terahertz radiation, equilibrium intraband terahertz light absorption and its temperature dependence are studied in GaAs/AlGaAs quantum well (QW) structures subjected to a lateral electric field. The emission spectrum consists of several lines we attribute to electron transitions between resonant and localized impurity states and to the electron transitions with participation of subband states.
ISSN:2162-2027
DOI:10.1109/ICIMW.2007.4516654