Three-Dimensional Simulation of Dopant-Fluctuation-Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors

Threshold voltage dispersion due to random discrete dopant fluctuation was simulated in recessed-channel, triple-gate, and saddle MOS structures, targeting future floating-gate memory cell transistor. All nonplanar structures showed improved dispersion characteristics, compared with the planar type...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1456-1463
Main Authors: KIM, Bomsoo, KWON, Wookhyun, BAEK, Chang-Ki, JIN, Seonghoon, SONG, Yunheub, KIM, Dae M
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Compound structure devices
Density-gradient (DG) model
Devices
Dispersions
Electronics
Exact sciences and technology
FinFET
flash EEPROM cell
Gummel iteration
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Metal oxide semiconductors
nonplanar MOS
random discrete dopant fluctuation (DDF)
RC-FinFET
recess-channel-array transistor (RCAT)
recessed-channel
saddle
Saddles
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Storage and reproduction of information
Threshold voltage
threshold voltage distribution
Transistors
triple-gate
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Summary:Threshold voltage dispersion due to random discrete dopant fluctuation was simulated in recessed-channel, triple-gate, and saddle MOS structures, targeting future floating-gate memory cell transistor. All nonplanar structures showed improved dispersion characteristics, compared with the planar type by proper adjustment of the tunnel oxide structure and channel doping level. The recessed-channel showed a continuous improvement of dispersion with the channel area widening beyond a certain threshold recess depth. In triple-gate structure, a significant reduction in dispersion is shown possible primarily via the superior gate controllability. Among the nonplanar structures, the saddle structure yielded the lowest variation for a fixed target with the choice of moderate device parameters from the other structures.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.921988