Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices

We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI...

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Bibliographic Details
Main Authors: Mazellier, J.P., Andrieu, F., Faynot, O., Brevard, L., Buj, C., Cristoloveanu, S., Le Tiec, Y., Deleonibus, S.
Format: Conference Proceeding
Language:English
Subjects:
Etching
Hafnium oxide
MOSFET circuits
Random access memory
Semiconductor device modeling
Semiconductor films
Silicon
Substrates
Threshold voltage
Tin
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Description
Summary:We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI nMOSFET with 145 and 11 nm thick BOX.
DOI:10.1109/ULIS.2008.4527135