Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices

We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI...

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Main Authors: Mazellier, J.P., Andrieu, F., Faynot, O., Brevard, L., Buj, C., Cristoloveanu, S., Le Tiec, Y., Deleonibus, S.
Format: Conference Proceeding
Language:English
Subjects:
Etching
Hafnium oxide
MOSFET circuits
Random access memory
Semiconductor device modeling
Semiconductor films
Silicon
Substrates
Threshold voltage
Tin
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creator Mazellier, J.P.
Andrieu, F.
Faynot, O.
Brevard, L.
Buj, C.
Cristoloveanu, S.
Le Tiec, Y.
Deleonibus, S.
description We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI nMOSFET with 145 and 11 nm thick BOX.
doi_str_mv 10.1109/ULIS.2008.4527135
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Etching
Hafnium oxide
MOSFET circuits
Random access memory
Semiconductor device modeling
Semiconductor films
Silicon
Substrates
Threshold voltage
Tin
title Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices
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