Experimental Demonstration of 3.3kV Planar CIGBT In NPT Technology

Due to the desirable properties of MOS-gate control, low conduction losses at high voltages, MOS-controiled thyristor structures are preferred for applications at 3.3 kV and beyond. In this paper, we report the results of the first experimental demonstration of the 3.3 kV rated CIGBT (Clustered Insu...

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Bibliographic Details
Main Authors: Sweet, M., Luther-King, N., Kong, S.T., Narayanan, E.M.S., Bruce, J., Ray, S.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Cathodes
Current density
Implants
Insulated gate bipolar transistors
Plasma density
Plasma temperature
Power semiconductor devices
Thyristors
Voltage control
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Summary:Due to the desirable properties of MOS-gate control, low conduction losses at high voltages, MOS-controiled thyristor structures are preferred for applications at 3.3 kV and beyond. In this paper, we report the results of the first experimental demonstration of the 3.3 kV rated CIGBT (Clustered Insulated Gate Bipolar Transistor) with planar gates in NPT technology. CIGBT is a three terminal MOS- controlled thyristor. Our results show that, with a positive Vce(sat) temperature coefficient and for identical turn-off loss, its Vce(sat) can be more than 0.7 V lower than that of an IGBT. Moreover, for the same gate voltage, it is shown that CIGBT shows lower saturation current density compared to the IGBT. Additionally, due to controlled thyristor mode of operation, a more favourable trade-off performance can be obtained using lower anode implant doses without significantly compromising Vce(sat).
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2008.4538894