Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

• Main Authors: Sankin, I., Sheridan, D.C., Draper, W., Bondarenko, V., Kelley, R., Mazzola, M.S., Casady, J.B.
• Format: Conference Proceeding
• Language: eng ; jpn
• Subjects: Application specific integrated circuits; Bonding; Delay; Power semiconductor devices; Power semiconductor switches; Silicon carbide; Switched-mode power supply; Temperature; Threshold voltage; Time measurement
• ISSN: 1063-6854; 1946-0201
• DOI: 10.1109/ISPSD.2008.4538948

This paper reports on the development of a normally- off 4H-SiC VJFET power switch technology suitable for drop in replacement in switching-mode power supplies (SMPS). The fabricated devices exhibited a low specific on-resistance (Ron-sp) measured at V DS =1 V and V Gs =2-5 V. The transistors designed for 800 V applications had R ON-SP < 2.9 mOmegaldrcm 2 and R ON-SP < 6.6 mOmegaldrcm 2 at 25degC and 200degC, respectively. The devices designed for 1200 V application had R ON-SP < 4.3 mOmegaldrcm 2 at 25degC and R ON-SP < 12.8 mOmegaldrcm 2 at 200degC. The total delay time of 73 ns was measured on a 1200 V device when switching from 600 V to 4.9 A with the gate bias ranging from 0 V to 2.75 V. The highest measured off-state drain voltage blocked by a 1200 V device at V GS =0 V exceeded 1800 V with the total drain leakage of 1 mA.