Implementation of molecular ion implant technology for PMOS extension implants and their compatibility with DRAM process flows

Molecular B and molecular C have been implanted in PMOS devices at the source drain extension (SDE) level. Different implant sequences have been compared in which Bi 8 H 22 and C 16 H 10 have been combined with pre-amorphization and co-implants. Bi 8 H 22 shows very good Vt roll-off behaviour and lo...

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Bibliographic Details
Main Authors: Falepin, A., Collart, E., Tran, S., Harris, M., Ameen, M., Hoffman, T., Rosseel, E., Saino, K., Horiguchi, N., Absil, P.
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
Annealing
Atomic measurements
Doping
Implants
MOS devices
Productivity
Random access memory
Semiconductivity
Semiconductor materials
Online Access:Request full text
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Summary:Molecular B and molecular C have been implanted in PMOS devices at the source drain extension (SDE) level. Different implant sequences have been compared in which Bi 8 H 22 and C 16 H 10 have been combined with pre-amorphization and co-implants. Bi 8 H 22 shows very good Vt roll-off behaviour and low junction leakage. Molecular C stabilizes junctions in post-processing DRAM annealing. Both molecular species show the potential to combine the beneficial effects of a pre-amorphization implant followed by a C and B implant in the formation of ultra-shallow junctions.
DOI:10.1109/IWJT.2008.4540015