Towards compact modelling of Schottky barrier CNTFET

Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the We...

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Bibliographic Details
Main Authors: Najari, M., Fregonese, S., Maneux, C., Zimmer, T., Mnif, H., Masmoudi, N.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Carbon nanotubes
CNTFETs
Computational modeling
Electrodes
Ohmic contacts
Schottky barriers
Schottky diodes
Schottky gate field effect transistors
Semiconductor device modeling
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Summary:Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the Wentzel-Kramers-Brillouin, "WKB" approximation of the transmission coefficient [1]. The results obtained with this model are compared with the measured I-V characteristics of a CNT Schottky diode device [2] and show good agreement.
DOI:10.1109/DTIS.2008.4540245