MAGFET with embedded Gilbert gain cell

A modified Gilbert gain cell implemented with lateral-PNP transistors has been successfully used to amplify the output current signal from an N-channel split-drain MOS transistor, or MAGFET. Compared with other previously reported signal conditioning circuits for MAGFETs, the herein presented approa...

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Bibliographic Details
Main Authors: Cruz, C.A.M., Ferraz, E.A., dos Reis Filho, C.A., Mognon, V.R.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
Magnetic circuits
Magnetic devices
Magnetic flux
Magnetic flux density
Magnetic sensors
MOSFETs
Prototypes
Signal processing
Online Access:Request full text
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Description
Summary:A modified Gilbert gain cell implemented with lateral-PNP transistors has been successfully used to amplify the output current signal from an N-channel split-drain MOS transistor, or MAGFET. Compared with other previously reported signal conditioning circuits for MAGFETs, the herein presented approach adds the advantage of featuring programmability for the current gain, thus providing means of controlling the sensitivity of the magnetic detecting device. Measurements of prototypes of the circuit, fabricated in 0.35mum CMOS, have proved the concept.
ISSN:2165-3542
DOI:10.1109/ICCDCS.2008.4542674