Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes

Mixed mode TCAD simulations are used to show the effects of guard bands and high density well contacts in maintaining the well potential after a single event strike and thus reduce the width of long transients in a 130-nm CMOS process. Experimental verification of the effectiveness in mitigating lon...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-06, Vol.55 (3), p.1708-1713
Main Authors: Narasimham, B., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Gadlage, M.J., Holman, T.W., Witulski, A.F., Robinson, W.H., Black, J.D., Benedetto, J.M., Eaton, P.H.
Format: Article
Language:English
Subjects:
Bands
Circuits
CMOS
CMOS process
Combinational circuits
Frequency
guard band
Guards
Heavy ions
High density
Microelectronics
parasitic bipolar
Potential well
Pulse circuits
Pulse measurements
pulse width
Simulation
single event transient (SET)
Single event upset
single event upset (SEU)
soft error
Space vector pulse width modulation
Strikes
Voltage
well contact
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Summary:Mixed mode TCAD simulations are used to show the effects of guard bands and high density well contacts in maintaining the well potential after a single event strike and thus reduce the width of long transients in a 130-nm CMOS process. Experimental verification of the effectiveness in mitigating long transients was achieved by measuring the distribution of SET pulse widths produced by heavy ions for circuits with isolated contacts and for circuits with guard bands combined with larger contacts in a 130-nm process using an autonomous characterization technique. Heavy-ion test results indicate that controlling the well potential by using guard bands, along with high density well contacts, helps eliminate of SETs longer than 1 ns.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.920260