Using Temperature as Observable of the Frequency Response of RF CMOS Amplifiers

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of...

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Bibliographic Details
Main Authors: Aldrete-Vidrio, E., Salhi, M.A., Altet, J., Grauby, S., Mateo, D., Michel, H., Clerjaud, L., Rampnoux, J.M., Rubio, A., Claeys, W., Dilhaire, S.
Format: Conference Proceeding
Language:English
Subjects:
analog test
Circuit optimization
Energy consumption
Frequency measurement
Frequency response
Integrated circuit measurements
Radio frequency
Radiofrequency amplifiers
RF test
Silicon
system debug
Temperature measurement
temperature measurements
Temperature sensors
Thermal test
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Summary:The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.
ISSN:1530-1877
1558-1780
DOI:10.1109/ETS.2008.15