Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

RF characteristics of a nanoscale MOSFET are measured and analyzed at temperatures ranging from 4.2 to 300 K for deep-space RF applications. This device shows a 197-GHz current gain cutoff frequency (f T ) and a 162-GHz maximum oscillation frequency (f max ) when operating at liquid-helium temperatu...

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Bibliographic Details
Published in:IEEE electron device letters 2008-07, Vol.29 (7), p.775-777
Main Authors: HONG, Seung-Ho, CHOI, Gil-Bok, BAEK, Rock-Hyun, KANG, Hee-Sung, JUNG, Sung-Woo, JEONG, Yoon-Ha
Format: Article
Language:English
Subjects:
Applied sciences
CMOS technology
Cryogenics
Cutoff frequency
Devices
Electronics
Exact sciences and technology
Extraterrestrial measurements
Gates
low temperature
maximum oscillation frequency
Molecular electronics, nanoelectronics
MOSFET circuits
MOSFETs
Nanocomposites
Nanomaterials
nanoscale MOSFET
Nanostructure
Oscillations
Radio frequencies
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature distribution
Temperature sensors
Transistors
Voltage
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Summary:RF characteristics of a nanoscale MOSFET are measured and analyzed at temperatures ranging from 4.2 to 300 K for deep-space RF applications. This device shows a 197-GHz current gain cutoff frequency (f T ) and a 162-GHz maximum oscillation frequency (f max ) when operating at liquid-helium temperature, which represent a 60% and 80% improvement compared to room temperature performances, respectively, f T continually improves as the temperature decreases to near-liquid-helium temperature due to the decrease of gate capacitance (C gg ). f max decreases as the temperature is lowered below 25 K due to the increase of gate resistance (R g ).
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000614