Survey of characterization and metrology for nanoelectronics

Advances in process technology enable high volume manufacture of integrated circuits with nano-scale transistor and interconnect technology. This fabrication capability results in the availability of a great range of nano-scale materials and structures such as nano-tubes, thin films, nano-dots, and...

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Bibliographic Details
Main Author: Diebold, A.C.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Integrated circuit interconnections
Integrated circuit manufacture
Integrated circuit technology
Manufacturing processes
Metrology
Nanoelectronics
Nanostructured materials
Nanostructures
Transistors
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Summary:Advances in process technology enable high volume manufacture of integrated circuits with nano-scale transistor and interconnect technology. This fabrication capability results in the availability of a great range of nano-scale materials and structures such as nano-tubes, thin films, nano-dots, and nanowires. Many of these materials are under consideration as the material for beyond CMOS switches. There are two themes emphasized in this paper. First, materials exhibit new phenomena such as quantum confinement at nano-scale dimensions. Measurements not only observe these phenomena, determination of the dimensions of nanoscale materials requires understanding of these phenomena. Second, simulation and modeling at nano-scale dimensions is critical to both device operation and metrology. This extended abstract reviews the materials characterization and metrology methods necessary for measuring materials properties. This abstract covers several of the many measurement methods necessary for nanoscale characterization and metrology.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2008.4558862