A capacitance reliability degradation mechanism in Hyper-abrupt junction varactors

Junction varactors form key passive components for RF and analog application where capacitance could be tuned by a control voltage. This paper details and models a reliability degradation mechanism due to electron trapping at the side of shallow trench isolation (STI) of the varactor, leading to sys...

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Bibliographic Details
Main Authors: Abadeer, W., Rassel, R., Johnson, J.B.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Capacitance
Capacitors
Charge carriers
Degradation
Doping profiles
P-n junctions
Stress
Varactors
Voltage
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Description
Summary:Junction varactors form key passive components for RF and analog application where capacitance could be tuned by a control voltage. This paper details and models a reliability degradation mechanism due to electron trapping at the side of shallow trench isolation (STI) of the varactor, leading to systematic capacitance degradation as function of time and stress conditions. A key dimension which controls this mechanism is the anode width or spacing between STI, where a minimum value should be defined to meet reliability targets.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2008.4558903