A reliability-aware RF power amplifier design for CMOS radio chip integration

For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental...

Full description

Saved in:
Bibliographic Details
Main Authors: Ruberto, M., Degani, O., Wail, S., Tendler, A., Fridman, A., Goltman, G.
Format: Conference Proceeding
Language:English
Subjects:
Aging
CMOS
Costs
Electrostatic discharge
ESD
hot carrier
Integrated circuit reliability
power amplifier
Power amplifiers
Power engineering and energy
Radio frequency
Radiofrequency amplifiers
Radiofrequency integrated circuits
reliability
Reliability engineering
RFIC
thermal
Wi-Fi
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 540
container_issue
container_start_page 536
container_title
container_volume
creator Ruberto, M.
Degani, O.
Wail, S.
Tendler, A.
Fridman, A.
Goltman, G.
description For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.
doi_str_mv 10.1109/RELPHY.2008.4558942
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_4558942</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4558942</ieee_id><sourcerecordid>4558942</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-bdc095528a3d00ef16dd5e1da83787d197daaa651e6568cd3386f58b267440ca3</originalsourceid><addsrcrecordid>eNotkMtqAjEYhdOLULU-gZu8QOyfe7IU0VpQLLZddCW_k4xNGZ0hMyC-fYW6Ogc--DgcQsYcJpyDf9nOV-_L74kAcBOltfNK3JGRt44roZQADeae9LmXjnHn-QMZ3IDy8HgFWnFmQZge6TvBjALJ5RMZtO0vgADpTJ-spzTHKuE-Vam7MDxjjnS7oE19jpnisalSma4txDYdTrSsM52tNx80Y0g1LX5SQ9Opi4eMXapPz6RXYtXG0S2H5Gsx_5wt2Wrz-jabrljiVndsHwrwWguHMgDEkpsQdOQBnbTOBu5tQESjeTTauCLI69RSu70wVikoUA7J-N-bYoy7Jqcj5svudpH8A7YNVBE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A reliability-aware RF power amplifier design for CMOS radio chip integration</title><source>IEEE Xplore All Conference Series</source><creator>Ruberto, M. ; Degani, O. ; Wail, S. ; Tendler, A. ; Fridman, A. ; Goltman, G.</creator><creatorcontrib>Ruberto, M. ; Degani, O. ; Wail, S. ; Tendler, A. ; Fridman, A. ; Goltman, G.</creatorcontrib><description>For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 1424420490</identifier><identifier>ISBN: 9781424420490</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9781424420506</identifier><identifier>EISBN: 1424420504</identifier><identifier>DOI: 10.1109/RELPHY.2008.4558942</identifier><identifier>LCCN: 82-640313</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aging ; CMOS ; Costs ; Electrostatic discharge ; ESD ; hot carrier ; Integrated circuit reliability ; power amplifier ; Power amplifiers ; Power engineering and energy ; Radio frequency ; Radiofrequency amplifiers ; Radiofrequency integrated circuits ; reliability ; Reliability engineering ; RFIC ; thermal ; Wi-Fi</subject><ispartof>2008 IEEE International Reliability Physics Symposium, 2008, p.536-540</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4558942$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54533,54898,54910</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4558942$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ruberto, M.</creatorcontrib><creatorcontrib>Degani, O.</creatorcontrib><creatorcontrib>Wail, S.</creatorcontrib><creatorcontrib>Tendler, A.</creatorcontrib><creatorcontrib>Fridman, A.</creatorcontrib><creatorcontrib>Goltman, G.</creatorcontrib><title>A reliability-aware RF power amplifier design for CMOS radio chip integration</title><title>2008 IEEE International Reliability Physics Symposium</title><addtitle>RELPHY</addtitle><description>For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.</description><subject>Aging</subject><subject>CMOS</subject><subject>Costs</subject><subject>Electrostatic discharge</subject><subject>ESD</subject><subject>hot carrier</subject><subject>Integrated circuit reliability</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Power engineering and energy</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Radiofrequency integrated circuits</subject><subject>reliability</subject><subject>Reliability engineering</subject><subject>RFIC</subject><subject>thermal</subject><subject>Wi-Fi</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>1424420490</isbn><isbn>9781424420490</isbn><isbn>9781424420506</isbn><isbn>1424420504</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMtqAjEYhdOLULU-gZu8QOyfe7IU0VpQLLZddCW_k4xNGZ0hMyC-fYW6Ogc--DgcQsYcJpyDf9nOV-_L74kAcBOltfNK3JGRt44roZQADeae9LmXjnHn-QMZ3IDy8HgFWnFmQZge6TvBjALJ5RMZtO0vgADpTJ-spzTHKuE-Vam7MDxjjnS7oE19jpnisalSma4txDYdTrSsM52tNx80Y0g1LX5SQ9Opi4eMXapPz6RXYtXG0S2H5Gsx_5wt2Wrz-jabrljiVndsHwrwWguHMgDEkpsQdOQBnbTOBu5tQESjeTTauCLI69RSu70wVikoUA7J-N-bYoy7Jqcj5svudpH8A7YNVBE</recordid><startdate>200804</startdate><enddate>200804</enddate><creator>Ruberto, M.</creator><creator>Degani, O.</creator><creator>Wail, S.</creator><creator>Tendler, A.</creator><creator>Fridman, A.</creator><creator>Goltman, G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200804</creationdate><title>A reliability-aware RF power amplifier design for CMOS radio chip integration</title><author>Ruberto, M. ; Degani, O. ; Wail, S. ; Tendler, A. ; Fridman, A. ; Goltman, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-bdc095528a3d00ef16dd5e1da83787d197daaa651e6568cd3386f58b267440ca3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Aging</topic><topic>CMOS</topic><topic>Costs</topic><topic>Electrostatic discharge</topic><topic>ESD</topic><topic>hot carrier</topic><topic>Integrated circuit reliability</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Power engineering and energy</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Radiofrequency integrated circuits</topic><topic>reliability</topic><topic>Reliability engineering</topic><topic>RFIC</topic><topic>thermal</topic><topic>Wi-Fi</topic><toplevel>online_resources</toplevel><creatorcontrib>Ruberto, M.</creatorcontrib><creatorcontrib>Degani, O.</creatorcontrib><creatorcontrib>Wail, S.</creatorcontrib><creatorcontrib>Tendler, A.</creatorcontrib><creatorcontrib>Fridman, A.</creatorcontrib><creatorcontrib>Goltman, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ruberto, M.</au><au>Degani, O.</au><au>Wail, S.</au><au>Tendler, A.</au><au>Fridman, A.</au><au>Goltman, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A reliability-aware RF power amplifier design for CMOS radio chip integration</atitle><btitle>2008 IEEE International Reliability Physics Symposium</btitle><stitle>RELPHY</stitle><date>2008-04</date><risdate>2008</risdate><spage>536</spage><epage>540</epage><pages>536-540</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424420490</isbn><isbn>9781424420490</isbn><eisbn>9781424420506</eisbn><eisbn>1424420504</eisbn><abstract>For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2008.4558942</doi><tpages>5</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1541-7026
ispartof 2008 IEEE International Reliability Physics Symposium, 2008, p.536-540
issn 1541-7026
1938-1891
language eng
recordid cdi_ieee_primary_4558942
source IEEE Xplore All Conference Series
subjects Aging
CMOS
Costs
Electrostatic discharge
ESD
hot carrier
Integrated circuit reliability
power amplifier
Power amplifiers
Power engineering and energy
Radio frequency
Radiofrequency amplifiers
Radiofrequency integrated circuits
reliability
Reliability engineering
RFIC
thermal
Wi-Fi
title A reliability-aware RF power amplifier design for CMOS radio chip integration
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T10%3A59%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20reliability-aware%20RF%20power%20amplifier%20design%20for%20CMOS%20radio%20chip%20integration&rft.btitle=2008%20IEEE%20International%20Reliability%20Physics%20Symposium&rft.au=Ruberto,%20M.&rft.date=2008-04&rft.spage=536&rft.epage=540&rft.pages=536-540&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=1424420490&rft.isbn_list=9781424420490&rft_id=info:doi/10.1109/RELPHY.2008.4558942&rft.eisbn=9781424420506&rft.eisbn_list=1424420504&rft_dat=%3Cieee_CHZPO%3E4558942%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-bdc095528a3d00ef16dd5e1da83787d197daaa651e6568cd3386f58b267440ca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4558942&rfr_iscdi=true