A 60-GHz fully-integrated Doherty power amplifier based on 0.13-μm CMOS process

A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 mum RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-c...

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Bibliographic Details
Main Authors: Wicks, B., Skafidas, E., Evans, R.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
CMOS millimeter wave integrated circuits
CMOS process
Doherty amplifier
Gain
High power amplifiers
Impedance matching
millimeter wave amplifiers
Network-on-a-chip
Power amplifiers
Power transmission lines
Prototypes
Transceivers
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Description
Summary:A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 mum RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-chip. The prototype operating from a 1.6-V supply exhibits an output referred P 1dB of 7.0 dB, a P SAT of +7.8 dBm, with peak power gain of 13.5 dB, a 3-dB bandwidth of 6.7 GHz, and 3.0 % PAE. The die area is 1.8 mm 2 . This amplifier achieves the highest reported figure of merit for power amplifiers of any published millimeter-wave PA on CMOS.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2008.4561388