Effect of technology scaling on RF performance of the transistors fabricated by standard CMOS technology

Cut-off frequency (f T ) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H 21 ) and noise (flicker and thermal) is improved with scaling down technology. Power gain (G u ) increase is slo...

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Main Authors: Han-Su Kim, Chulho Chung, Joohyun Jeong, Seung-Jae Jung, Jinsung Lim, JinHyoun Joe, Jaehoon Park, HyunWoo Lee, Gwangdoo Jo, Kangwook Park, Jedon Kim, Hansu Oh, Jong Shik Yoon
Format: Conference Proceeding
Language:English
Subjects:
1f noise
Capacitance
CMOS technology
Cut-off frequency
Cutoff frequency
Drain conductance
Extrapolation
Gain
Integrated circuit technology
MOS devices
Noise
Performance gain
Radio frequency
RF FET
Threshold voltage
Transistors
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Summary:Cut-off frequency (f T ) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H 21 ) and noise (flicker and thermal) is improved with scaling down technology. Power gain (G u ) increase is slow down and even saturated at 45 nm as technology advances. Such saturation in power gain is attributed to rapid increase in g ds (drain conductance). Additional efforts are required to reduce g ds for continuous improvement in power gain with the scaling. V th optimization can be one of options to achieve better g ds .
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2008.4561498