Evaluation of Ultra Thin Body Si-On-ONO (UTB SOONO) transistors using ultra thin spacer technology

Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channe...

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Bibliographic Details
Main Authors: Hyun Jun Bae, Sung Hwan Kim, Sung In Hong, Yong Lack Choi, Ho Ju Song, Chang Woo Oh, Dong-Won Kim, Donggun Park, KyungSeok Oh, Won-Seong Lee
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
Degradation
Fabrication
Germanium silicon alloys
Immune system
Research and development
Silicon germanium
Silicon on insulator technology
SOI
Space technology
thin spacer
Transistors
UTB SOONO
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Summary:Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channel effect degradation by using thin spacer. In this paper, it is shown that thin spacer technology is very attractive to UTB SOI device in terms of device performance and process simplicity.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2008.4567233