High-Gain Amplifiers With Amorphous-Silicon Thin-Film Transistors

This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TF...

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Bibliographic Details
Published in:IEEE electron device letters 2008-08, Vol.29 (8), p.882-884
Main Author: Sambandan, S.
Format: Article
Language:English
Subjects:
Amplification
Amplifier
Amplifier design
Amplifiers
Applied sciences
Chemical elements
Circuit properties
Direct current
Driver circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Feedback
Gain
Geometry
Impedance
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal design
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
Transconductance
Transistors
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Description
Summary:This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000951