A Physical Model of High Temperature 4H-SiC MOSFETs

A comprehensive physical model for the analysis, characterization, and design of 4H-silicon carbide (SiC) MOSFETs has been developed. The model has been verified for an extensive range of bias conditions and temperatures. It incorporates details of interface trap densities, Coulombic interface trap...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2029-2040
Main Authors: Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel
Format: Article
Language:English
Subjects:
Computer simulation
Correlation
Devices
High-temperature mobility
high-temperature operation
interface traps
Mathematical models
MOSFET
MOSFETs
Photonic band gap
Rough surfaces
Saturation
Scattering
Semiconductor device modeling
Silicon carbide
silicon carbide (SiC) MOSFET
Surface roughness
Temperature
velocity saturation
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Description
Summary:A comprehensive physical model for the analysis, characterization, and design of 4H-silicon carbide (SiC) MOSFETs has been developed. The model has been verified for an extensive range of bias conditions and temperatures. It incorporates details of interface trap densities, Coulombic interface trap scattering, surface roughness scattering, phonon scattering, velocity saturation, and their dependences on bias and temperature. The physics-based models were implemented into our device simulator that is tailored for 4H-SiC MOSFET analysis. By using a methodology of numerical modeling, simulation, and close correlation with experimental data, values for various physical parameters governing the operation of 4H-SiC MOSFETs, including the temperature-dependent interface trap density of states, the root-mean-square height and correlation length of the surface roughness, and the electron saturation velocity in the channel and its dependence on temperature, have been extracted. Coulomb scattering and surface roughness scattering limit surface mobility for a wide range of temperatures in the subthreshold and linear regions of device operation, whereas the saturation velocity and the high-field mobility limit current in the saturation region.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.926665