Interfacial characterization of ultra low-k film (kappa=2.55) with time of flight secondary ion mass spectrometry (TOF-SIMS)

Interfacial characterization of ultra low-k film with the layer underneath is very important for reliable manufacturing of ultra low-k film. In this study, we proposed a new application of TOF-SIMS to predict the interfacial behavior of the ultra low-k with the layer underneath. Strong correlation b...

Full description

Saved in:
Bibliographic Details
Main Authors: Widodo, J., Xing, Z.X., Mo, Z.Q., Ouyang, T., Gui, D., Hua, Y.N., Liu, H., Lu, W.
Format: Conference Proceeding
Language:English
Subjects:
Adhesive bonding
Carbon
Correlation
Materials
Mathematical model
Silicon
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Interfacial characterization of ultra low-k film with the layer underneath is very important for reliable manufacturing of ultra low-k film. In this study, we proposed a new application of TOF-SIMS to predict the interfacial behavior of the ultra low-k with the layer underneath. Strong correlation between carbon intensity at the bottom interface with the adhesion energy of the ultra low-k with the layer underneath is observed. We also observed a linear correlation between the quantified carbon peak intensity and the adhesion energy.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2008.4588208