Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on silicon-carbon (Si:C) source/drain stressors

We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height Phi Bn and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low Ph...

Full description

Saved in:
Bibliographic Details
Main Authors: Hoong-Shing Wong, Fang-Yue Liu, Kah-Wee Ang, Shao-Ming Koh, Koh, A.T.-Y., Tsung-Yang Liow, Lee, R.T.-P., Lim, A.E.-J., Wei-Wei Fang, Ming Zhu, Lap Chan, Balasubramaniam, N., Samudra, G., Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Frequency modulation
Implants
Junctions
Logic gates
Nickel
Resistance
Silicon
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height Phi Bn and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low Phi Bn of 0.1 eV on Si:C S/D stressors. Comparable sheet resistance and junction leakage are observed with and without Se segregation. When integrated in nanoscale SOI n-FETs with Ni-silicided Si:C S/D, the new Se-segregation contact technology achieves 36% reduction in total series resistance and 32% I ON enhancement. Linear transconductance G MLin also shows large enhancement in the sample with Se-segregated contacts.
ISSN:0743-1562
DOI:10.1109/VLSIT.2008.4588605