Performance Characteristics of GaAs-Based Oxide-Confined In(Ga)As/GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Diode Lasers

The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has...

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Bibliographic Details
Main Authors: Piskorski, L., Wasiak, M., Sarzala, R.P., Nakwaski, W.
Format: Conference Proceeding
Language:English
Subjects:
1300-nm VCSELs
Apertures
Cavity resonators
Gain
Gallium arsenide
optimisation of VCSEL designs
quantum-dot lasers
simulation of a diode laser operation
Surface emitting lasers
Threshold current
Vertical cavity surface emitting lasers
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Summary:The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.
ISSN:2162-7339
DOI:10.1109/ICTON.2008.4598618