Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

We present a successful synthesis of single crystalline homogeneous Si 1-x Ge x nanowires (diameter:7~52nm) via vapor-liquid-solid mechanism. Results show that quality, density, and growth rate of Si 1-x Ge x nanowires are greatly affected by the growth temperature and the single crystalline Si 1-x...

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Bibliographic Details
Main Authors: Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Liew, Y.F., Kwong, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Electrodes
High-k
Logic gates
Metals
MOSFET
MOSFET circuits
Nanoscale devices
Nanowire
SiGe
Silicon
Silicon germanium
VLS
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Summary:We present a successful synthesis of single crystalline homogeneous Si 1-x Ge x nanowires (diameter:7~52nm) via vapor-liquid-solid mechanism. Results show that quality, density, and growth rate of Si 1-x Ge x nanowires are greatly affected by the growth temperature and the single crystalline Si 1-x Ge x nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using back-gated field effect transistor integrated with HfO 2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si 1-x Ge x nanowire transistor exhibits p-MOS operation with I on /I off ~10 4 , sub-threshold swing of 97 mV/dec.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2007.4601137