Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes

Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electrolum...

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Bibliographic Details
Main Authors: Jan, S.-R., Cheng, T.-H., Liao, M.H., Hung, T.-A., Deng, Y., Liu, C.W.
Format: Conference Proceeding
Language:English
Subjects:
Light emitting diodes
Logic gates
luminescence
MOS
Nitrogen
Radiative recombination
SiC
Silicon carbide
Temperature measurement
Tunneling
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Summary:Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2007.4601279