Atomically precise silicon device fabrication

An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fa...

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Bibliographic Details
Main Authors: Simmons, M.Y., Ruess, F.J., Pok, W., Thompson, D.L., Fuchsle, M., Scappucci, G., Reusch, T.C.G., Goh, K.-E.J., Schofield, S.R., Weber, B., Oberbeck, L., Hamilton, A.R., Ratto, F.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
CMOS
Doping
Fabrication
semiconductor device fabrication
semiconductor device measurement
Silicon
Surface morphology
Surface treatment
Wire
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Summary:An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity, low temperature crystal growth. A major advantage of this strategy is the ability to investigate the role of dopant placement and atomically controlled growth on electronic device operation.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2007.4601329