Analytical model of nanoscale piezoresistor

The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv 1 and epsiv 2 is given. It allows to interpret correctly the experimental data. It is s...

Full description

Saved in:
Bibliographic Details
Main Authors: Gridchin, V.A., Gridchin, A.V., Bunzina, V.Yu
Format: Conference Proceeding
Language:English
Subjects:
Nanoscale devices
Piezoresistance
Resistance
Resistors
Sensors
Silicon
Strain
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv 1 and epsiv 2 is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm 2 the components m 11 and m 12 are sharply increasing whereas component m 44 stays without significant changes.
DOI:10.1109/IFOST.2008.4602841